Cecilia A., Rack A., Douissard P.-A., Martin T., Dos Santos Rolo T., Vagovic P., Pelliccia D., Couchaud M., Dupre K., Baumbach T.

in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 633 (2011). DOI:10.1016/j.nima.2010.06.192

Abstract

Within the framework of an FP6 project (SCINTAX)1 we developed a new thin film single crystal scintillator for high resolution X-ray imaging based on a layer of modified LSO (Lu2SiO5) grown by liquid phase epitaxy (LPE) on a dedicated substrate. In this work we present the characterisation of the scintillating LSO films in terms of optical and scintillation properties as well as spatial resolution performances. The obtained results are discussed and compared with the performances of the thin scintillating films commonly used in synchrotron-based micro-imaging applications. © 2010 Elsevier B.V. All rights reserved.

Danilewsky A.N., Wittge J., Croell A., Allen D., McNally P., Vagovic P., Dos Santos Rolo T., Li Z., Baumbach T., Gorostegui-Colinas E., Garagorri J., Elizalde M.R., Fossati M.C., Bowen D.K., Tanner B.K.

in Journal of Crystal Growth, 318 (2011) 1157-1163. DOI:10.1016/j.jcrysgro.2010.10.199

Abstract

White beam X-ray diffraction imaging (topography) with an optimised CCD-detector system is used to monitor in-situ and in real time the nucleation, growth and movement of dislocations in silicon at high temperatures. It can be shown, that damage like microcracks and the surrounding strain fields in a wafer act as sources for dislocation loops, which end in slip bands far away from the source. The dislocations are arranged in channels of parallel {1 1 1} glide planes, which become visible as bands of parallel surface steps when the dislocations slip out on the back or front sides of the wafer. The width of such a channel or band depend on the dimensions of the damaged volume where the dislocations nucleate. This can be explained with a simple geometrical model. © 2010 Elsevier B.V.