Hanschke D., Helfen L., Altapova V., Danilewsky A., Baumbach T.

in Applied Physics Letters, 101 (2012), 244103. DOI:10.1063/1.4769988

Abstract

Synchrotron radiation laminography with X-ray diffraction contrast enables three-dimensional imaging of dislocations in monocrystalline wafers. We outline the principle of the technique, the required experimental conditions, and the reconstruction procedure. The feasibility and the potential of the method are demonstrated by three-dimensional imaging of dislocation loops in an indent-damaged and annealed silicon wafer. © 2012 American Institute of Physics.

7 citations of “Three-dimensional imaging of dislocations by X-ray diffraction laminography